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Subtotal: $137.00
The VBFB1206N is a high-performance N-channel power MOSFET packaged in a TO251 package, suitable for applications that need to handle higher voltages and currents. With a VDS (drain-source voltage) of 200V and a VGS (gate-source voltage) range of ±20V, this MOSFET can operate stably under higher voltage conditions. Its threshold voltage (Vth) is 3.42V, ensuring reliable conduction when the gate voltage reaches a certain value. The RDS(ON) of the VBFB1206N is 51mΩ @ VGS=10V, and supports a maximum continuous drain current (ID) of 30A. The device uses Trench technology to provide excellent switching performance and low on-resistance.
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Availability: 10000 In StockVBF2317 is a high-performance unipolar P-channel MOSFET in TO251 package. Designed for high current and low on-resistance applications, this MOSFET has a drain-source voltage (V_DS) of -30V and a gate-source voltage (V_GS) of ±20V. Its threshold voltage (V_th) is -1.8V, with a low on-resistance (R_DS(on)) of 24mΩ @ V_GS = 4.5V and an even lower on-resistance (R_DS(on)) of 18mΩ @ V_GS = 10V, and a maximum continuous drain current (I_D) of -40A. Using Trench technology, VBF2317 provides excellent switching performance and low conduction losses, suitable for high-efficiency power supply and current control applications.
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Availability: 10000 In StockVBF1206 is a high-performance single N-channel MOSFET in TO251 package. It has excellent electrical characteristics and can handle 20V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). The device has a threshold voltage (Vth) of 0.83V, an on-resistance (RDS(ON)) as low as 5mΩ at VGS=10V, and can provide up to 85A of continuous drain current. VBF1206 uses Trench technology to provide excellent switching performance and low conduction losses, making it ideal for a variety of high-efficiency electronic applications.
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Availability: 10000 In StockNo additional description available.
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Availability: 10000 In StockThe VBE2153M is a high-performance P-channel MOSFET designed for high-voltage and high-current switching applications. It is packaged in TO252, single P-channel configuration, with a drain-source voltage (VDS) of -150V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is -2.9V, the RDS(ON) is 273mΩ (VGS = 10V), and the maximum continuous drain current (ID) is 10A. Using Trench technology, the VBE2153M provides efficient switching performance and superior power management capabilities.
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Availability: 10000 In StockNo additional description available.
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Availability: 0 In StockBipolar Transistors - BJT TRANS NPN 160V 0.6A SOT-23
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Availability: 1068 In StockZener Diodes 200mW, 5%, Small Signal Zener Diode
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Availability: 1275 In StockRF Bipolar Transistors VCEO=160V IC=600mA
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Availability: 1338 In StockSmall Signal Switching Diodes Small Signal Diode, SOD-123F, 100V, 0.15A, 150C
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Availability: 5991 In StockNo additional description available.
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Availability: 10404 In StockFresh Vegetables Deals 1 × $39.00Daily Fresh Organic Butter 1 × $38.00New Hot Fruits Juice 1 × $37.00Delicious Chips for Snacks 1 × $32.00Strawberry Lucerne Lowfat 1 × $29.00Subtotal: $137.00
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