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Subtotal: $137.00
VBPB165R20S is a high voltage unipolar N-channel MOSFET in TO3P package. Designed to handle high voltage and high current applications, this MOSFET has a drain-source voltage (V_DS) of 650V and a gate-source voltage (V_GS) of ±30V. Its threshold voltage (V_th) is 3.23V, on-resistance (R_DS(on)) is 161mΩ @ V_GS = 10V, and maximum continuous drain current (I_D) is 20A. The MOSFET adopts SJ_Multi-EPI technology, providing excellent switching performance and reliable high voltage handling capabilities.
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Availability: 10000 In StockVBP15R25S is a high voltage single N-channel MOSFET in TO247 package. The device has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, making it suitable for high voltage applications. Its threshold voltage (Vth) is 3.49V, and its on-resistance (RDS(ON)) is 127mΩ at VGS=10V, which can provide a continuous drain current of up to 25A. VBP15R25S uses super junction multi-epitaxial (SJ_Multi-EPI) technology to optimize its electrical performance and switching efficiency, making it particularly suitable for high power density and high voltage applications.
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Availability: 10000 In Stockhttps://www.vbsemi.com/data/upload/file/VBMB2611.pdf
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Availability: 10000 In StockThe VBM2611 is a high-performance P-channel MOSFET in a TO220 package. Designed to handle high current and high power applications, the device features a -60V drain-source voltage (VDS), ±30V gate-source voltage (VGS) tolerance, and 2V threshold voltage (Vth). The VBM2611 uses Trench technology, providing extremely low on-resistance and excellent current handling capabilities, making it suitable for a variety of applications with high power requirements.
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Availability: 10000 In StockThe VBM2124N is a high-performance P-channel MOSFET designed for high voltage and high current applications. The MOSFET is packaged in TO220, single P-channel configuration, with a drain-source voltage (VDS) of -120V and a gate-source voltage (VGS) of ±20V. The device has a threshold voltage (Vth) of -2.7V, an RDS(ON) of 38mΩ (VGS = 10V), and a maximum continuous drain current (ID) of -40A. Using Trench technology, the VBM2124N provides excellent switching performance and efficient power management capabilities.
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Availability: 10000 In StockVBL2104N is a high-performance P-channel MOSFET in TO-263 package, designed for medium-high voltage and high current applications. It has a drain-source voltage (V_DS) of -100V and a gate-source voltage (V_GS) of ±20V. The threshold voltage (V_th) of this MOSFET is -1.85V, the on-state resistance (R_DS(ON)) is 45 mΩ (at V_GS of 4.5V) and 38 mΩ (at V_GS of 10V), and it can withstand a continuous leakage current (I_D) of up to -43A. VBL2104N uses trench technology to provide good switching performance and high current handling capability, suitable for a variety of medium-high voltage and high current application scenarios.
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Availability: 10000 In StockVBFB1638 is a high-performance single N-channel MOSFET in TO251 package. It has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.8V. The MOSFET has an on-resistance of 35mΩ at a VGS of 10V and supports a continuous drain current (ID) of up to 40A. VBFB1638 adopts advanced Trench technology, has excellent switching performance and low conduction loss, and is suitable for a variety of application scenarios requiring high current and low power consumption.
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Availability: 10000 In StockThe VBFB1206N is a high-performance N-channel power MOSFET packaged in a TO251 package, suitable for applications that need to handle higher voltages and currents. With a VDS (drain-source voltage) of 200V and a VGS (gate-source voltage) range of ±20V, this MOSFET can operate stably under higher voltage conditions. Its threshold voltage (Vth) is 3.42V, ensuring reliable conduction when the gate voltage reaches a certain value. The RDS(ON) of the VBFB1206N is 51mΩ @ VGS=10V, and supports a maximum continuous drain current (ID) of 30A. The device uses Trench technology to provide excellent switching performance and low on-resistance.
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Availability: 10000 In StockVBF2317 is a high-performance unipolar P-channel MOSFET in TO251 package. Designed for high current and low on-resistance applications, this MOSFET has a drain-source voltage (V_DS) of -30V and a gate-source voltage (V_GS) of ±20V. Its threshold voltage (V_th) is -1.8V, with a low on-resistance (R_DS(on)) of 24mΩ @ V_GS = 4.5V and an even lower on-resistance (R_DS(on)) of 18mΩ @ V_GS = 10V, and a maximum continuous drain current (I_D) of -40A. Using Trench technology, VBF2317 provides excellent switching performance and low conduction losses, suitable for high-efficiency power supply and current control applications.
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Availability: 10000 In StockVBF1206 is a high-performance single N-channel MOSFET in TO251 package. It has excellent electrical characteristics and can handle 20V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). The device has a threshold voltage (Vth) of 0.83V, an on-resistance (RDS(ON)) as low as 5mΩ at VGS=10V, and can provide up to 85A of continuous drain current. VBF1206 uses Trench technology to provide excellent switching performance and low conduction losses, making it ideal for a variety of high-efficiency electronic applications.
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Availability: 10000 In StockNo additional description available.
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Availability: 10000 In StockThe VBE2153M is a high-performance P-channel MOSFET designed for high-voltage and high-current switching applications. It is packaged in TO252, single P-channel configuration, with a drain-source voltage (VDS) of -150V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is -2.9V, the RDS(ON) is 273mΩ (VGS = 10V), and the maximum continuous drain current (ID) is 10A. Using Trench technology, the VBE2153M provides efficient switching performance and superior power management capabilities.
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Availability: 10000 In StockFresh Vegetables Deals 1 × $39.00Daily Fresh Organic Butter 1 × $38.00New Hot Fruits Juice 1 × $37.00Delicious Chips for Snacks 1 × $32.00Strawberry Lucerne Lowfat 1 × $29.00Subtotal: $137.00
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