VBL2104N is a high-performance P-channel MOSFET in TO-263 package, designed for medium-high voltage and high current applications. It has a drain-source voltage (V_DS) of -100V and a gate-source voltage (V_GS) of ±20V. The threshold voltage (V_th) of this MOSFET is -1.85V, the on-state resistance (R_DS(ON)) is 45 mΩ (at V_GS of 4.5V) and 38 mΩ (at V_GS of 10V), and it can withstand a continuous leakage current (I_D) of up to -43A. VBL2104N uses trench technology to provide good switching performance and high current handling capability, suitable for a variety of medium-high voltage and high current application scenarios.
| Spec | Value |
|---|---|
| Part Number | VBL2104N |
| Manufacturer | VBsemi |
| Package | TO263 |
| No additional technical data available. | |
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