Description

VBPB165R20S is a high voltage unipolar N-channel MOSFET in TO3P package. Designed to handle high voltage and high current applications, this MOSFET has a drain-source voltage (V_DS) of 650V and a gate-source voltage (V_GS) of ±30V. Its threshold voltage (V_th) is 3.23V, on-resistance (R_DS(on)) is 161mΩ @ V_GS = 10V, and maximum continuous drain current (I_D) is 20A. The MOSFET adopts SJ_Multi-EPI technology, providing excellent switching performance and reliable high voltage handling capabilities.