Description

VBP15R25S is a high voltage single N-channel MOSFET in TO247 package. The device has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, making it suitable for high voltage applications. Its threshold voltage (Vth) is 3.49V, and its on-resistance (RDS(ON)) is 127mΩ at VGS=10V, which can provide a continuous drain current of up to 25A. VBP15R25S uses super junction multi-epitaxial (SJ_Multi-EPI) technology to optimize its electrical performance and switching efficiency, making it particularly suitable for high power density and high voltage applications.