Description

The VBM2124N is a high-performance P-channel MOSFET designed for high voltage and high current applications. The MOSFET is packaged in TO220, single P-channel configuration, with a drain-source voltage (VDS) of -120V and a gate-source voltage (VGS) of ±20V. The device has a threshold voltage (Vth) of -2.7V, an RDS(ON) of 38mΩ (VGS = 10V), and a maximum continuous drain current (ID) of -40A. Using Trench technology, the VBM2124N provides excellent switching performance and efficient power management capabilities.