Description

VBL2104N is a high-performance P-channel MOSFET in TO-263 package, designed for medium-high voltage and high current applications. It has a drain-source voltage (V_DS) of -100V and a gate-source voltage (V_GS) of ±20V. The threshold voltage (V_th) of this MOSFET is -1.85V, the on-state resistance (R_DS(ON)) is 45 mΩ (at V_GS of 4.5V) and 38 mΩ (at V_GS of 10V), and it can withstand a continuous leakage current (I_D) of up to -43A. VBL2104N uses trench technology to provide good switching performance and high current handling capability, suitable for a variety of medium-high voltage and high current application scenarios.