Description

VBFB1638 is a high-performance single N-channel MOSFET in TO251 package. It has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.8V. The MOSFET has an on-resistance of 35mΩ at a VGS of 10V and supports a continuous drain current (ID) of up to 40A. VBFB1638 adopts advanced Trench technology, has excellent switching performance and low conduction loss, and is suitable for a variety of application scenarios requiring high current and low power consumption.