Description

The VBFB1206N is a high-performance N-channel power MOSFET packaged in a TO251 package, suitable for applications that need to handle higher voltages and currents. With a VDS (drain-source voltage) of 200V and a VGS (gate-source voltage) range of ±20V, this MOSFET can operate stably under higher voltage conditions. Its threshold voltage (Vth) is 3.42V, ensuring reliable conduction when the gate voltage reaches a certain value. The RDS(ON) of the VBFB1206N is 51mΩ @ VGS=10V, and supports a maximum continuous drain current (ID) of 30A. The device uses Trench technology to provide excellent switching performance and low on-resistance.