Description

VBF2317 is a high-performance unipolar P-channel MOSFET in TO251 package. Designed for high current and low on-resistance applications, this MOSFET has a drain-source voltage (V_DS) of -30V and a gate-source voltage (V_GS) of ±20V. Its threshold voltage (V_th) is -1.8V, with a low on-resistance (R_DS(on)) of 24mΩ @ V_GS = 4.5V and an even lower on-resistance (R_DS(on)) of 18mΩ @ V_GS = 10V, and a maximum continuous drain current (I_D) of -40A. Using Trench technology, VBF2317 provides excellent switching performance and low conduction losses, suitable for high-efficiency power supply and current control applications.