Description

VBF1206 is a high-performance single N-channel MOSFET in TO251 package. It has excellent electrical characteristics and can handle 20V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). The device has a threshold voltage (Vth) of 0.83V, an on-resistance (RDS(ON)) as low as 5mΩ at VGS=10V, and can provide up to 85A of continuous drain current. VBF1206 uses Trench technology to provide excellent switching performance and low conduction losses, making it ideal for a variety of high-efficiency electronic applications.