Description

The VBE2153M is a high-performance P-channel MOSFET designed for high-voltage and high-current switching applications. It is packaged in TO252, single P-channel configuration, with a drain-source voltage (VDS) of -150V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is -2.9V, the RDS(ON) is 273mΩ (VGS = 10V), and the maximum continuous drain current (ID) is 10A. Using Trench technology, the VBE2153M provides efficient switching performance and superior power management capabilities.