VBsemi

VBPB165R20S is a high voltage unipolar N-channel MOSFET in TO3P package. Designed to handle high voltage and high curre…

VBP15R25S is a high voltage single N-channel MOSFET in TO247 package. The device has a drain-source voltage (VDS) of 50…

https://www.vbsemi.com/data/upload/file/VBMB2611.pdf

The VBM2611 is a high-performance P-channel MOSFET in a TO220 package. Designed to handle high current and high power a…

The VBM2124N is a high-performance P-channel MOSFET designed for high voltage and high current applications. The MOSFET…

VBL7601 is a single N-channel MOSFET with a TO263-7L package. This MOSFET uses Trench technology with a maximum drain-s…

VBL2104N is a high-performance P-channel MOSFET in TO-263 package, designed for medium-high voltage and high current ap…

VBL15R22S is a single N-channel MOSFET in TO-263 package. This MOSFET is designed for high voltage applications and can…

VBFB1638 is a high-performance single N-channel MOSFET in TO251 package. It has a drain-source voltage (VDS) of 60V, a …

The VBFB1206N is a high-performance N-channel power MOSFET packaged in a TO251 package, suitable for applications that …

VBF2317 is a high-performance unipolar P-channel MOSFET in TO251 package. Designed for high current and low on-resistan…

VBF1206 is a high-performance single N-channel MOSFET in TO251 package. It has excellent electrical characteristics and…

VBE2670

VBE2355

The VBE2153M is a high-performance P-channel MOSFET designed for high-voltage and high-current switching applications. …

VBE2103M

VBE1151M

VBA1305

VBA1151M

VB4658

VBM1206N

VBE1308

VBF1615

VBF1638