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Used in switch-mode power supplies, PV inverters, EV OBC/DC-DC/inverters, UPS and energy storage, industrial inverters, 5G base station power, medical equipment, aerospace and defense. Offers fast recovery and low losses.

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VBPB165R20S is a high voltage unipolar N-channel MOSFET in TO3P package. Designed to handle high voltage and high current applications, this MOSFET has a drain-source voltage (V_DS) of 650V and a gate-source voltage (V_GS) of ±30V. Its threshold voltage (V_th) is 3.23V, on-resistance (R_DS(on)) is 161mΩ @ V_GS = 10V, and maximum continuous drain current (I_D) is 20A. The MOSFET adopts SJ_Multi-EPI technology, providing excellent switching performance and reliable high voltage handling capabilities.

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VBP15R25S is a high voltage single N-channel MOSFET in TO247 package. The device has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, making it suitable for high voltage applications. Its threshold voltage (Vth) is 3.49V, and its on-resistance (RDS(ON)) is 127mΩ at VGS=10V, which can provide a continuous drain current of up to 25A. VBP15R25S uses super junction multi-epitaxial (SJ_Multi-EPI) technology to optimize its electrical performance and switching efficiency, making it particularly suitable for high power density and high voltage applications.

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