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Fresh Vegetables Deals 1 × $39.00 -
Daily Fresh Organic Butter 1 × $38.00 -
New Hot Fruits Juice 1 × $37.00 -
Delicious Chips for Snacks 1 × $32.00 -
Strawberry Lucerne Lowfat 1 × $29.00
Subtotal: $137.00
VBPB165R20S is a high voltage unipolar N-channel MOSFET in TO3P package. Designed to handle high voltage and high current applications, this MOSFET has a drain-source voltage (V_DS) of 650V and a gate-source voltage (V_GS) of ±30V. Its threshold voltage (V_th) is 3.23V, on-resistance (R_DS(on)) is 161mΩ @ V_GS = 10V, and maximum continuous drain current (I_D) is 20A. The MOSFET adopts SJ_Multi-EPI technology, providing excellent switching performance and reliable high voltage handling capabilities.
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Availability: 10000 In StockVBP15R25S is a high voltage single N-channel MOSFET in TO247 package. The device has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, making it suitable for high voltage applications. Its threshold voltage (Vth) is 3.49V, and its on-resistance (RDS(ON)) is 127mΩ at VGS=10V, which can provide a continuous drain current of up to 25A. VBP15R25S uses super junction multi-epitaxial (SJ_Multi-EPI) technology to optimize its electrical performance and switching efficiency, making it particularly suitable for high power density and high voltage applications.
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Availability: 10000 In Stockhttps://www.vbsemi.com/data/upload/file/VBMB2611.pdf
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Availability: 10000 In StockThe VBM2611 is a high-performance P-channel MOSFET in a TO220 package. Designed to handle high current and high power applications, the device features a -60V drain-source voltage (VDS), ±30V gate-source voltage (VGS) tolerance, and 2V threshold voltage (Vth). The VBM2611 uses Trench technology, providing extremely low on-resistance and excellent current handling capabilities, making it suitable for a variety of applications with high power requirements.
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Availability: 10000 In StockThe VBM2124N is a high-performance P-channel MOSFET designed for high voltage and high current applications. The MOSFET is packaged in TO220, single P-channel configuration, with a drain-source voltage (VDS) of -120V and a gate-source voltage (VGS) of ±20V. The device has a threshold voltage (Vth) of -2.7V, an RDS(ON) of 38mΩ (VGS = 10V), and a maximum continuous drain current (ID) of -40A. Using Trench technology, the VBM2124N provides excellent switching performance and efficient power management capabilities.
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Availability: 10000 In StockVBL2104N is a high-performance P-channel MOSFET in TO-263 package, designed for medium-high voltage and high current applications. It has a drain-source voltage (V_DS) of -100V and a gate-source voltage (V_GS) of ±20V. The threshold voltage (V_th) of this MOSFET is -1.85V, the on-state resistance (R_DS(ON)) is 45 mΩ (at V_GS of 4.5V) and 38 mΩ (at V_GS of 10V), and it can withstand a continuous leakage current (I_D) of up to -43A. VBL2104N uses trench technology to provide good switching performance and high current handling capability, suitable for a variety of medium-high voltage and high current application scenarios.
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Availability: 10000 In StockVBFB1638 is a high-performance single N-channel MOSFET in TO251 package. It has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.8V. The MOSFET has an on-resistance of 35mΩ at a VGS of 10V and supports a continuous drain current (ID) of up to 40A. VBFB1638 adopts advanced Trench technology, has excellent switching performance and low conduction loss, and is suitable for a variety of application scenarios requiring high current and low power consumption.
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Availability: 10000 In StockThe VBFB1206N is a high-performance N-channel power MOSFET packaged in a TO251 package, suitable for applications that need to handle higher voltages and currents. With a VDS (drain-source voltage) of 200V and a VGS (gate-source voltage) range of ±20V, this MOSFET can operate stably under higher voltage conditions. Its threshold voltage (Vth) is 3.42V, ensuring reliable conduction when the gate voltage reaches a certain value. The RDS(ON) of the VBFB1206N is 51mΩ @ VGS=10V, and supports a maximum continuous drain current (ID) of 30A. The device uses Trench technology to provide excellent switching performance and low on-resistance.
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Availability: 10000 In StockVBF2317 is a high-performance unipolar P-channel MOSFET in TO251 package. Designed for high current and low on-resistance applications, this MOSFET has a drain-source voltage (V_DS) of -30V and a gate-source voltage (V_GS) of ±20V. Its threshold voltage (V_th) is -1.8V, with a low on-resistance (R_DS(on)) of 24mΩ @ V_GS = 4.5V and an even lower on-resistance (R_DS(on)) of 18mΩ @ V_GS = 10V, and a maximum continuous drain current (I_D) of -40A. Using Trench technology, VBF2317 provides excellent switching performance and low conduction losses, suitable for high-efficiency power supply and current control applications.
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Availability: 10000 In StockVBF1206 is a high-performance single N-channel MOSFET in TO251 package. It has excellent electrical characteristics and can handle 20V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). The device has a threshold voltage (Vth) of 0.83V, an on-resistance (RDS(ON)) as low as 5mΩ at VGS=10V, and can provide up to 85A of continuous drain current. VBF1206 uses Trench technology to provide excellent switching performance and low conduction losses, making it ideal for a variety of high-efficiency electronic applications.
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Availability: 10000 In StockNo additional description available.
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Availability: 10000 In StockThe VBE2153M is a high-performance P-channel MOSFET designed for high-voltage and high-current switching applications. It is packaged in TO252, single P-channel configuration, with a drain-source voltage (VDS) of -150V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is -2.9V, the RDS(ON) is 273mΩ (VGS = 10V), and the maximum continuous drain current (ID) is 10A. Using Trench technology, the VBE2153M provides efficient switching performance and superior power management capabilities.
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Availability: 10000 In StockFresh Vegetables Deals 1 × $39.00Daily Fresh Organic Butter 1 × $38.00New Hot Fruits Juice 1 × $37.00Delicious Chips for Snacks 1 × $32.00Strawberry Lucerne Lowfat 1 × $29.00Subtotal: $137.00
Continued advancements in technology will further change how fashion is created, marketed, and consumed. Virtual reality, artificial intelligence, and blockchain are expected to play significant roles. There is a stronger focus on inclusivity and diversity in fashion...
Continued advancements in technology will further change how fashion is created, marketed, and consumed. Virtual reality, artificial intelligence, and blockchain are expected to play significant roles. There is a stronger focus on inclusivity and diversity in fashion...
Continued advancements in technology will further change how fashion is created, marketed, and consumed. Virtual reality, artificial intelligence, and blockchain are expected to play significant roles. There is a stronger focus on inclusivity and diversity in fashion...
Continued advancements in technology will further change how fashion is created, marketed, and consumed. Virtual reality, artificial intelligence, and blockchain are expected to play significant roles. There is a stronger focus on inclusivity and diversity in fashion...
Continued advancements in technology will further change how fashion is created, marketed, and consumed. Virtual reality, artificial intelligence, and blockchain are expected to play significant roles. There is a stronger focus on inclusivity and diversity in fashion...
Continued advancements in technology will further change how fashion is created, marketed, and consumed. Virtual reality, artificial intelligence, and blockchain are expected to play significant roles. There is a stronger focus on inclusivity and diversity in fashion...
Continued advancements in technology will further change how fashion is created, marketed, and consumed. Virtual reality, artificial intelligence, and blockchain are expected to play significant roles. There is a stronger focus on inclusivity and diversity in fashion...
Continued advancements in technology will further change how fashion is created, marketed, and consumed. Virtual reality, artificial intelligence, and blockchain are expected to play significant roles. There is a stronger focus on inclusivity and diversity in fashion...
Continued advancements in technology will further change how fashion is created, marketed, and consumed. Virtual reality, artificial intelligence, and blockchain are expected to play significant roles. There is a stronger focus on inclusivity and diversity in fashion...
Continued advancements in technology will further change how fashion is created, marketed, and consumed. Virtual reality, artificial intelligence, and blockchain are expected to play significant roles. There is a stronger focus on inclusivity and diversity in fashion...
Continued advancements in technology will further change how fashion is created, marketed, and consumed. Virtual reality, artificial intelligence, and blockchain are expected to play significant roles. There is a stronger focus on inclusivity and diversity in fashion...
Continued advancements in technology will further change how fashion is created, marketed, and consumed. Virtual reality, artificial intelligence, and blockchain are expected to play significant roles. There is a stronger focus on inclusivity and diversity in fashion...
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